Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. STM study of epitaxial growth of Ge on Si(001)
3. Growth of Ge on Si(100) and Si(113) studied by STM
4. Raman study of strain relaxation in Ge on Si
5. Strain in Nanoscale Germanium Hut Clusters on Si(001) Studied by X-Ray Diffraction
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