Growth of Ge on Si(100) and Si(113) studied by STM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Origin of the optical transitions in ordered Si/Ge(001) superlattices
2. Electronic structure of [110] Si‐Ge thin‐layer superlattices
3. Optical window in strained‐layer Si/Ge microstructures
4. Proc. Fifth Conf. on Silicon Molecular Beam Epitaxy,1989
5. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
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