Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures-Reference-Cited by-同舟云学术

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Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Published:2012-10-15 Issue:8 Volume:112 Page:083713
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Abramkin D. S.,Putyato M. A.,Budennyy S. A.,Gutakovskii A. K.,Semyagin B. R.,Preobrazhenskii V. V.,Kolomys O. F.,Strelchuk V. V.,Shamirzaev T. S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4759258

Reference61 articles.

1. Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

2. Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

3. Vertical field-effect transistor based on wave-function extension

4. Sensing individual terahertz photons

5. A GaAsxP1−x/GaP strained‐layer superlattice

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1. Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots;Physical Review B;2023-11-22

2. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots;Nanomaterials;2023-02-28

3. Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment;Nanomaterials;2023-02-14

4. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories;Nanomaterials;2022-10-27

5. Spin dynamics of charged excitons in ultrathin (In,Al)(Sb,As)/AlAs and Al(Sb,As)/AlAs quantum wells with an indirect band gap;Physical Review B;2022-08-09

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