Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing-Reference-Cited by-同舟云学术

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Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

Published:2008-07 Issue:19 Volume:254 Page:6076-6080
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen P.S.,Lee S.W.,Lee M.H.,Liu C.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Advances in the growth and characterization of Ge quantum dots and islands

2. Effects of interdiffusion on the band alignment of GeSi dots

3. The evolution of electroluminescence in Ge quantum-dot diodes with the fold number

4. Reversible Shape Evolution of Ge Islands on Si(001)

5. Embedding of Nanoscale 3D SiGe Islands in a Si Matrix

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron and hole separation in Ge nanocones formed on Si1−xGex solid solution by Nd:YAG laser radiation;Applied Surface Science;2015-08

2. Electron microscopy of quantum dots;Journal of Microscopy;2014-11-18

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