Embedding of Nanoscale 3D SiGe Islands in a Si Matrix
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.81.3471/fulltext
Reference17 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
4. Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
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