STM study of epitaxial growth of Ge on Si(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Study of ultra-thin Ge/Si strained layer superlattice
2. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
3. Gem/Sin strained-layer superlattices fabricated by phase-locked epitaxy
4. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
5. Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries
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1. Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2014-04-01
2. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer;Journal of Applied Physics;2013-09-14
3. Dense chains of stacked quantum dots in Ge/Si heterostructures;SPIE Proceedings;2013-05-22
4. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility;Nanoscale Research Letters;2011-09-05
5. An initial phase of Ge hut array formation at low temperature on Si(001);Journal of Applied Physics;2011-05-15
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