Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab29e3/pdf
Reference36 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
3. Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
4. Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials
5. Electrical characterization of AlxTiyOz mixtures and Al2O3–TiO2–Al2O3 nanolaminates
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1. Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure;Japanese Journal of Applied Physics;2024-08-01
2. Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications;2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2022-11-28
3. Effect of hydrochloric acid addition on dielectric properties of solution-processed aluminum titanium oxide thin film annealed at low temperature;Thin Solid Films;2022-07
4. Mist chemical vapor deposition of Al1−xTixOy thin films and their application to a high dielectric material;Journal of Applied Physics;2022-03-14
5. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering;Journal of Applied Physics;2021-07-07
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