Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1856137
Reference11 articles.
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4. STUDIES OF MULTICOMPONENT OXIDE FILMS AND LAYERED HETEROSTRUCTURE GROWTH PROCESSES VIA IN SITU, TIME-OF-FLIGHT ION SCATTERING AND DIRECT RECOIL SPECTROSCOPY
5. Oxygen 1sx-ray-absorption edges of transition-metal oxides
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