Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432401
Reference12 articles.
1. Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory
4. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon
5. Dielectric properties of rf sputtered Ta2O5on rapid thermally nitrided Si
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