Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering
Author:
Affiliation:
1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0054045
Reference53 articles.
1. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
2. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
3. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
4. High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator
5. First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures;Semiconductor Science and Technology;2023-08-11
2. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24
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