AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
4. AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator
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