Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications
Author:
Affiliation:
1. Kumamoto University,Faculty of Advanced Science and Technology,Kumamoto,Japan
2. University of Fukui,Faculty of Engineering,Fukui,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9975349/9975304/09975434.pdf?arnumber=9975434
Reference18 articles.
1. Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
2. Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent
3. Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films
4. Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures
5. Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
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