Normally‐off vertical‐type mesa‐gate GaN MOSFET
Author:
Affiliation:
1. School of Electronics EngineeringKyungpook National UniversityDaeguRepublic of Korea
2. R&D DivisionSK HynixIcheonRepublic of Korea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.1692
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4. GaN metal–oxide‐semiconductor high‐electron‐mobility‐transistor with atomic layer deposited Al2O3 as gate dielectric;Ye P.D.;Appl. Phys. Lett.,2005
5. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers
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3. Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs;ECS Journal of Solid State Science and Technology;2019
4. Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-08-31
5. Using gallium‐nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters;IET Power Electronics;2016-06
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