Using gallium‐nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters-Reference-Cited by-同舟云学术

Using gallium‐nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters

Published:2016-06 Issue:8 Volume:9 Page:1727-1731
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Lin Jhe‐Yu¹,Chen Dan¹,Hung Chung‐Wen²,Huang Zan³

Affiliation:

1. Department of Electrical EngineeringNational Taiwan UniversityTaipeiTaiwan

2. Department of Electrical EngineeringNational Yunlin University of Science and TechnologyYunlinTaiwan

3. Transphorm, INC.Castilian DriveGoletaCA93117USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2015.0810

Reference23 articles.

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3. 2013 Energy Conversion Congress and Exposition (ECCE) 2013 IEEE Y. Zhang M. Rodriguez D. Maksimovic High frequency synchronous buck converter using GaN‐on‐SiC HEMTs 488 494

4. Low consumption and high frequency GaN‐based gate driver circuit with integrated PWM;Delias A.;IET Electron. Lett.,2015

5. Efficiency comparison between Si‐IGBT‐based drive and GaN‐based drive;Shirabe K.;IEEE Trans. Ind. Appl.,2014

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