Low consumption and high frequency GaN‐based gate driver circuit with integrated PWM
Author:
Affiliation:
1. C2S2University of Limoges Xlim LabsLimogesFrance
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.0417
Reference8 articles.
1. Push the Envelope: Design Concepts for Envelope-Tracking Power Amplifiers
2. A 10 W S‐band MMIC power amplifier with integrated 100 MHz switch‐mode power supply and control circuitry for active electronically scanned arrays;Bent G.;IEEE J. Solid‐State Circuits,2013
3. A new GaN‐based high‐speed and high‐power switching circuit for envelope‐tracking modulators;Augeau P.;Int. J. Microw. Wirel. Technol.,2013
4. A 10‐MHz GaN HEMT DC/DC boost converter for power amplifier applications;Gamand F.;IEEE Trans. Circuits Syst. II Express Briefs,2012
5. An Efficient High-Frequency Drive Circuit for GaN Power HFETs
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1. High-efficiency and low-consumption underwater sonar transmitter with improved triple-pulse HP-PWM signal model based on class D amplifier;EURASIP Journal on Wireless Communications and Networking;2016-07-07
2. Using gallium‐nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters;IET Power Electronics;2016-06
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