Author:
Augeau Patrick,Bouysse Philippe,Martin Audrey,Nebus Jean Michel,Quéré Raymond,Lapierre Luc,Jardel Olivier,Piotrowicz Stéphane
Abstract
In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT's. The elementary switching cell, composed of two GaN HEMT's and two resistors, acts like a power threshold comparator with high-output voltage. Theoretical analysis of static and dynamic circuit operation points out the dependence of efficiency and switching speed to the main circuit elements. Four switching cells are then combined together thanks to SiC Schottky diodes to design a multi-level power switch that can be used as a power supply modulator for envelope tracking power amplifiers. The designed four-level supply modulator, based on Nitronex GaN HEMT's, exhibits more than 75% of efficiency for an envelope signal up to 4 MHz, a switching frequency of 20 MHz and output voltages in the range of 12–30 V.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering
Reference12 articles.
1. 1. Aitto-oja T. : High efficiency envelope tracking supply voltage modulator for high power base station amplifier applications, in 2010 IEEE MTT-S Int. Microwave Symp. Digest
2. 2. (MTT), 23-28 May 2010, 668-671.
3. Push the Envelope: Design Concepts for Envelope-Tracking Power Amplifiers
4. Yan J.J. ; Hsia C. ; Kimball D.F. ; Asbeck P.M. : GaN envelope tracking power amplifier with more than one Octave Carrier Bandwidth, in 2011 IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), 16–19 October 2011, 1–4.
5. Bacqué L. : Optimisation du rendement d'amplificateurs de puissance sous contrainte de linéarité en présence de modulations numériques complexes, PhD Thesis no. 2008LIMO441, University of Limoges, France, 2008.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献