Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs
Author:
Affiliation:
1. The Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Solid‐State Lighting and Energy‐Saving Electronics, School of electronic Science and EngineeringNanjing University Nanjing 210093 China
Funder
China Scholarship Council
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2482
Reference26 articles.
1. Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor
2. Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
3. Normally‐off vertical‐type mesa‐gate GaN MOSFET
4. Lu B. SaadatOI PinerEL PalaciosT.Enhancement‐mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment. in2009 Device Research Conference. June2009.
5. Kim D.H.andJ.A.delAlamo.30 nm E‐mode InAs PHEMTs for THz and future logic applications. in 2008 IEEE international Electron devices meeting. Dec2008.
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