Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor-Reference-Cited by-同舟云学术

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

Published:2016-09 Issue:5 Volume:10 Page:423-432
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Jena Kanjalochan¹,Swain Raghunandan¹,Lenka Trupti Ranjan¹

Affiliation:

1. Microelectronics and VLSI Design Group, Department of Electronics and Communication EngineeringNational Institute of Technology SilcharAssam788010India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2015.0332

Reference35 articles.

1. Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT

2. X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

3. Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT

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