Epitaxial regrowth and characterizations of vertical GaN transistors on silicon
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab3154/pdf
Reference33 articles.
1. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
2. High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$
3. Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate
4. Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors
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3. A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si;IEEE Access;2021
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