Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs
Author:
Funder
National Natural Science Foundation of China (NSFC)
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference39 articles.
1. On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Preferential formation of Al–N bonds in low N-content AlGaAsN
4. Electrical Double-Layer Modeling of Different Al-Content on the Performance of AlGaN/GaN HEMTs
5. Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors
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1. Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors;Results in Physics;2024-09
2. Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress;Chinese Physics B;2022-10-01
3. Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors;ETRI Journal;2022-01-12
4. The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2020-06-15
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