The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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The Yellow Luminescence Origin of N-Polar GaN Film Grown by Metal Organic Chemical Vapor Deposition

Published:2020-06-15 Issue:5 Volume:9 Page:056003
ISSN:2162-8777
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zhao Ying^ORCID,Xu Shengrui,Feng Lansheng,Lin Zhiyu,Li Peixian,Zhang Jincheng,Hao Yue

Funder

Key Research and Development program in Shaanxi Province

National Natural Science Foundation of China

National Key R&D Program of China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ab9887/pdf

Reference31 articles.

1. Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths

2. Effects of 4° misoriented sapphire substrate on optical property of green InGaN/GaN multiple quantum wells

3. Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs

4. Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire;Crystals;2023-07-07

2. Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux;Journal of Luminescence;2023-03

3. Study the influence mechanism of In/Ga ratio on InGaN waveguide layers during epitaxial growth;Journal of Alloys and Compounds;2022-02

4. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids;Science China Technological Sciences;2021-06-15

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