Preferential formation of Al–N bonds in low N-content AlGaAsN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1464660
Reference19 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Band gaps of GaPN and GaAsN alloys
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