Electrical Double-Layer Modeling of Different Al-Content on the Performance of AlGaN/GaN HEMTs
Author:
Funder
National Natural Science Foundation of China (NSFC)
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
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1. Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors;physica status solidi (b);2024-08-26
2. Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors;ETRI Journal;2022-01-12
3. Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs;ECS Journal of Solid State Science and Technology;2019
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