Hole trapping in thin gate oxides during Fowler - Nordheim constant current stress
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Charge generation in thin SiO2 polysilicon-gate MOS capacitors
2. Positive charge generation in SiO2by electron‐impact emission of trapped electrons
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5. Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors
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