Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling-Reference-Cited by-同舟云学术

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Published:2021-10-14 Issue:14 Volume:130 Page:145702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Masin F.¹^ORCID,De Santi C.¹,Lettens J.²³⁴,Franchi J.⁵,Domeij M.⁵,Moens P.²,Meneghini M.¹^ORCID,Meneghesso G.¹^ORCID,Zanoni E.¹

Affiliation:

1. Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy

2. ON Semiconductor, Belgium, Westerring 15, Oudenaarde, Belgium

3. Physics Department, University of Antwerp (Campus Drie Eiken), Universiteitsplein 1, B-2610 Antwerp, Belgium

4. Department of Solid-State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Ghent, Belgium

5. ON Semiconductor, Sweden, Isafjordsgatan 32C, 16440 Kista, Sweden

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0057285

Reference19 articles.

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3. D. Heer, D. Domes, and D. Peters, “Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module,” in PCIM Europe 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management, May (IEEE, 2016), IEEE pp. 53–59.

4. M. Beier-möbius, “Breakdown of gate oxide of SiC-MOSFETs and Si-IGBTs under high temperature and high gate voltage,” in PCIM Europe 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management, May (IEEE, 2017), IEEE pp. 16–18.

5. Differential Variable Base Charge Pumping ($\Delta-\text{CP}$) for SiO2/SiC Interface Characterization

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