Positive charge generation in SiO2by electron‐impact emission of trapped electrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352074
Reference42 articles.
1. SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors
2. Current runaway in insulators affected by impact ionization and recombination
3. The effect of gate metal and SiO2thickness on the generation of donor states at the Si‐SiO2interface
4. Exciton transport in SiO2as a possible cause of surface‐state generation in MOS structures
5. High‐field transport in SiO2on silicon induced by corona charging of the unmetallized surface
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