Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2layers using homogeneous nonavalanche injection of holes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345827
Reference31 articles.
1. Correlation of trap creation with electron heating in silicon dioxide
2. Trap creation in silicon dioxide produced by hot electrons
3. Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection
4. Interface trap generation in silicon dioxide when electrons are captured by trapped holes
5. Interface states generated by the injection of electrons and holes into SiO2
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