Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2layers using homogeneous nonavalanche injection of holes-Reference-Cited by-同舟云学术

Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2layers using homogeneous nonavalanche injection of holes

Published:1990-06-15 Issue:12 Volume:67 Page:7595-7601
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schwerin A. V.,Heyns M. M.,Weber W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345827

Reference31 articles.

1. Correlation of trap creation with electron heating in silicon dioxide

2. Trap creation in silicon dioxide produced by hot electrons

3. Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection

4. Interface trap generation in silicon dioxide when electrons are captured by trapped holes

5. Interface states generated by the injection of electrons and holes into SiO2

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