Trap creation in silicon dioxide produced by hot electrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342824
Reference69 articles.
1. Electron trapping by radiation‐induced charge in MOS devices
2. Radiation damage in silicon dioxide films exposed to reactive ion etching
3. Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2
4. Dielectric breakdown in electrically stressed thin films of thermal SiO2
5. Current induced trap generation in SiO2
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