Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy-Reference-Cited by-同舟云学术

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Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy

Published:1988-03-01 Issue:3 Volume:3 Page:223-226
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Davies J I,Hodson P D,Marshall A C,Scott M D,Griffiths R J M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/3/i=3/a=011/pdf

Reference27 articles.

1. Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs

2. Schottky barrier height of n‐InxGa1−xAs diodes

3. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

4. Two-dimensional electronic systems for high-speed device applications

5. Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures

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1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers;Journal of Crystal Growth;2011-01

3. The characteristics of intimate AuInyAl1 − yAs Schottky diodes: a mismatch dependence study;Materials Science and Engineering: B;1994-12

4. An investigation of the electrical and chemical properties of intimate metal‐InyAl1−yAs(100) interfaces;Journal of Applied Physics;1994-03

5. Influence of V/III Molar Ratio on Deep Traps in Metalorganic Chemical Vapor Deposition Grown InAlAs Layers;Japanese Journal of Applied Physics;1993-07-01

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