Two-dimensional electronic systems for high-speed device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference36 articles.
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4. Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface
5. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
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1. New perspectives in high-speed low-noise charge amplifiers with ultra-wide band heterojunction FETs;Nuclear Physics B - Proceedings Supplements;1995-11
2. Heterostructure Field-Effect Transistors;Physics of High-Speed Transistors;1993
3. Quantum Confined Electronic and Photonic Devices;IETE Journal of Research;1992-03
4. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS;IEEE Electron Device Letters;1991-04
5. Chapter 1 Strained-Layer Superlattices;Semiconductors and Semimetals;1990
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