Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93499
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3. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
4. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
5. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
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1. Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells;Journal of Applied Physics;2014-03-28
2. InGaAs/GaAsSb based two-dimensional electron gases;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03
3. Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors;AIP Advances;2013-09
4. Electron transport properties of MM-HEMT with varied channel indium contents;Acta Physica Sinica;2003
5. Huge carrier mobilities expected in quasi-one-dimensional organic crystals;Physical Review B;2002-10-04
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