Author:
Qiu Zhi-Jun ,Jiang Chun-Ping ,Gui Yong-Sheng ,Shu Xiao-Zhou ,Guo Shao-Ling ,Chu Jun-Hao ,Cui Li-Jie ,Zeng Yi-Ping ,Zhu Zhan-Ping ,Wang Bao-Qiang ,
Abstract
Transport properties of two_dimensional electron gas (2DEG) are crucial to metamorphic high_electron_mobility transistors (MM_HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov_de Hass oscillations and variable temperature Hall measurements. The results indicate that the electrical performance is the best when the In content is 0.65 in the channel for MM_HEMT. When the In content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
6 articles.
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