Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
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Published:2008
Issue:8
Volume:57
Page:5232
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Shang Li-Yan ,Lin Tie ,Zhou Wen-Zheng ,Li Dong-Lin ,Gao Hong-Ling ,Zeng Yi-Ping ,Guo Shao-Ling ,Yu Guo-Lin ,Chu Jun-Hao ,
Abstract
Magnetotransport measurements have been carried out on In0.53Ga0.47As/In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77K. We have observed a large positive magnetoresistance in the low magnetic field range， but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered， we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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