Author:
Gao Kuang-Hong ,Wei Lai-Ming ,Yu Guo-Lin ,Yang Rui ,Lin Tie ,Wei Yan-Feng ,Yang Jian-Rong ,Sun Lei ,Dai Ning ,Chu Jun-Hao , , ,
Abstract
HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation in xx and quantum Hall plateaus of xy are observed, indicating that it is a good transistor. By measuring the magnetoresistance near zero field, we observe the weak antilocalization effect in our sample, suggesting a relatively strong spin-orbit coupling. The experimental data can be well fitted by the ILP theory. The fitting-obtained spin-splitting energy increases with increasing electron concentration, and the maximum reaches up to 9.06 meV. From the obtained spin-splitting energy, we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration, which is contrary to the observations in a wide quantum well.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
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