Device research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with f t = 170 GHz and f max = 253 GHz
2. Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs
3. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
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1. Low temperature photoluminescence study of GaAs defect states*;Chinese Physics B;2020-01-01
2. Hetero-epitaxy of L g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications;Chinese Physics B;2015-08
3. Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD;Chinese Physics B;2015-06-25
4. Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers;Journal of Materials Science: Materials in Electronics;2013-11-24
5. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1−ybuffers;Chinese Physics B;2013-02
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