Hetero-epitaxy of L g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/8/087305/pdf
Reference14 articles.
1. AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD
2. Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications
3. Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications
4. Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells
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1. Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy;Chinese Physics B;2019-02
2. Vortices and vortex lattices in quantum ferrofluids;Journal of Physics: Condensed Matter;2017-02-01
3. Control of symmetric properties of metamorphic In 0.27 Ga 0.73 As layers by substrate misorientation;Chinese Physics B;2016-03
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