Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/15/11/046/pdf
Reference27 articles.
1. A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology
2. Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMTs
3. High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess
4. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
5. Model for modulation doped field effect transistor
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry;Chinese Physics Letters;2015-12
2. Studying on source/drain contact resistance reduction for InP-based HEMT;Microwave and Optical Technology Letters;2015-11-26
3. 100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz;Chinese Physics B;2014-03
4. 0.15-μm T-gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As InP-based HEMT with f max of 390 GHz;Chinese Physics B;2013-12
5. Self-consistent analysis of AlSb/InAs high electron mobility transistor structures;Journal of Applied Physics;2010-08-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3