0.15-μm T-gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As InP-based HEMT with f max of 390 GHz
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/12/128503/pdf
Reference14 articles.
1. Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation
2. Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs
3. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates
4. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application
5. 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz
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1. Research on the self-supporting T-shaped gate structure of GaN-based HEMT devices;Chinese Physics B;2022-12-09
2. Impact of Gate Offset in Gate Recess on DC and RF Performance of InAlAs/InGaAs InP-based HEMTs;Chinese Physics B;2021-12-24
3. Design and realization of THz InAlAs/InGaAs InP-based PHEMTs;J INFRARED MILLIM W;2018
4. Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs;Chinese Physics B;2018-02
5. Long-Time Thermal Stability Comparison of Alloyed and Non-Alloyed Ohmic Contacts for InP-Based HEMTs;physica status solidi (a);2017-09-07
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