Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=1/a=017202/pdf
Reference21 articles.
1. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
2. Breakdown voltage analysis of Al 0.25 Ga 0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
3. Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz
4. Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency
5. Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT
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1. Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures;Solid-State Electronics;2022-11
2. Cryogenically-Cooled Power Electronics for Long-Distance Aircraft;IEEE Access;2022
3. Development of High-Power High Switching Frequency Cryogenically Cooled Inverter for Aircraft Applications;IEEE Transactions on Power Electronics;2020-06
4. Review of Power Electronics Components at Cryogenic Temperatures;IEEE Transactions on Power Electronics;2020-05
5. Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate*;Chinese Physics B;2020-04-01
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