Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS

Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT

Published:2011-01 Issue:1 Volume:20 Page:017203
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Mao Wei,Yang Cui,Hao Yao,Zhang Jin-Cheng,Liu Hong-Xia,Bi Zhi-Wei,Xu Sheng-Rui,Xue Jun-Shuai,Ma Xiao-Hua,Wang Chong,Yang Lin-An,Zhang Jin-Feng,Kuang Xian-Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

3. Small-signal characteristics of AlInN/GaN HEMTs

4. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

5. Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

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