CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing
Author:
Affiliation:
1. Deemed to be University,GITAM,Dept. of EECE,Bengaluru,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032882.pdf?arnumber=10032882
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1. A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis
2. GaN HEMT reliability, Microelectronics Reliability;alamo,2009
3. Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT
4. Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization, Superlattices and Microstructures;pal,2021
5. Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability
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