Small-signal characteristics of AlInN/GaN HEMTs-Reference-Cited by-同舟云学术

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Small-signal characteristics of AlInN/GaN HEMTs

Published:2006 Issue:13 Volume:42 Page:779
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Medjdoub F.,Carlin J.-F.,Gonschorek M.,Py M.A.,Grandjean N.,Vandenbrouck S.,Gaquière C.,Dejaeger J.C.,Kohn E.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20060768?crawler=true&mimetype=application/pdf

Reference9 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. Power electronics on InAlN/(In)GaN: Prospect for a record performance

4. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

5. InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of interfacial strain relaxation and electron beam damage thresholds in Al_0.3In_0.7N/GaN heterostructures by transmission electron microscopy;Journal of Vacuum Science & Technology B;2022-09

2. Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride;Journal of Applied Physics;2020-03-31

3. Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors;Electronics Letters;2016-01

4. A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT;Semiconductors;2015-04

5. Structural and optical properties of Ga auto-incorporated InAlN epilayers;Journal of Crystal Growth;2014-12

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