Structural and optical properties of Ga auto-incorporated InAlN epilayers-Reference-Cited by-同舟云学术

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Structural and optical properties of Ga auto-incorporated InAlN epilayers

Published:2014-12 Issue: Volume:408 Page:97-101
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Taylor E.,Smith M.D.,Sadler T.C.,Lorenz K.,Li H.N.,Alves E.,Parbrook P.J.,Martin R.W.

Funder

UK Engineering and Physical Sciences Research Council

European Space Agency (ESA)

Science Foundation Ireland

FCT Portugal

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics;Butté;J. Phys. D: Appl. Phys.,2007

2. Anomalous ion channeling in AlInN/GaN bilayers;Lorenz;Phys. Rev. Lett.,2006

3. Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN;Ahl;J. Cryst. Growth,2014

4. Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process;Jardel;Int. J. Microw. Wirel. Technol.,2011

5. AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications;Guo;Phys. Status Solidi C,2010

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1. Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering;Journal of Applied Physics;2024-05-01

2. Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes;physica status solidi (a);2023-04-14

3. Assessing the Impact of Secondary Fluorescence on X-Ray Microanalysis Results from Semiconductor Thin Films;Microscopy and Microanalysis;2022-10-01

4. H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq;Journal of Crystal Growth;2022-06

5. Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition;Micro and Nanostructures;2022-05

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