Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Published:2016-01 Issue:2 Volume:52 Page:157-159
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Kim S.¹,Ryou J.‐H.²,Dupuis R.D.³,Kim H.¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, and Semiconductor Physics Research CenterChonbuk National UniversityJeonju561‐756Republic of Korea

2. Department of Mechanical Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH)University of HoustonHoustonTexas77204‐4006USA

3. Center for Compound Semiconductors and School of Electrical and Computer EngineeringGeorgia Institute of TechnologyAtlantaGeorgia30332‐0250USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.3430

Reference10 articles.

1. Status of the emerging InAlN/GaN power HEMT technology;Medjdoub F.;Open Elec. Electron. Eng. J.,2008

2. InAlN/GaN MOSHEMT with self‐aligned thermally generated oxide recess;Alomari M.;IEEE Electron Device Lett.,2009

3. GaN Schottky barrier photodetector with a semi‐insulating AlInN cap layer;Chang S.J.;J. Electrochem. Soc.,2010

4. AlGaN/GaN heterostructure field‐effect transistor with semi‐insulating Mg‐doped GaN cap layer;Lee K.H.;ECS Solid State Lett.,2012

5. Carrier transport properties of Mg‐doped InAlN films;Kim S.;Electron. Lett.,2012

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