Author:
Alomari M.,Medjdoub F.,Carlin J.-F.,Feltin E.,Grandjean N.,Chuvilin A.,Kaiser U.,Gaquiere C.,Kohn E.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
53 articles.
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1. Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs;Semiconductor Science and Technology;2024-05-20
2. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates;IEEE Transactions on Electron Devices;2024-02
3. Advanced Down-Scaling Technology and its Physical Mechanism for 515 GHz GaN HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. Thermal oxidation of lattice mismatched Al1-xInxN films on GaN;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-09
5. Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz;IEEE Transactions on Electron Devices;2023-06