Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2917290
Reference34 articles.
1. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
2. Power electronics on InAlN/(In)GaN: Prospect for a record performance
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
4. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
5. Evaluation of AlInN∕GaN HEMTs on sapphire substrate in microwave, time and temperature domains
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