Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications-Reference-Cited by-同舟云学术

Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications

Published:2022-11 Issue:11 Volume:69 Page:6002-6009
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Carpenter Morgan G.¹^ORCID,Aaen Peter H.²^ORCID,Snowden Christopher M.³^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, University of Surrey, Guildford, U.K.

2. Department of Electrical Engineering, Colorado School of Mines, Golden, CO, USA

3. Faculty of Engineering and Physical Sciences, University of Southampton, Southampton, U.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09913720.pdf?arnumber=9913720

Reference29 articles.

1. Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs;onodera;Proc European Microwave Integrated Circuits Conf,2011

2. Compound Semiconductor Device Modelling

3. Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors

4. Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200 mm GaN-on-Si with Au-free technology;marcon;Proc SPIE,2015

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1. A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT;IEEE Transactions on Microwave Theory and Techniques;2024

2. From 2D TCAD Model to a Physical 1D Equivalent Circuit Model for a GaN HEMT;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08