30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz-Reference-Cited by-同舟云学术

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30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

Published:2006-10-20 Issue:No. 42 Volume:45 Page:L1111-L1113
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Higashiwaki Masataka,Mimura Takashi,Matsui Toshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate;physica status solidi (a);2024-08-12

2. Advanced Down-Scaling Technology and its Physical Mechanism for 515 GHz GaN HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate;Journal of Applied Physics;2023-10-09

4. Scaled InAlN/GaN HEMT on Sapphire With f_T/f_max of 190/301 GHz;IEEE Transactions on Electron Devices;2023-06

5. Electronic metadevices for terahertz applications;Nature;2023-02-15

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