Advanced Down-Scaling Technology and its Physical Mechanism for 515 GHz GaN HEMT
Author:
Affiliation:
1. Institute of Semiconductors,Beijing,China,100083
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399680.pdf?arnumber=10399680
Reference40 articles.
1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
2. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
3. Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
4. Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz
5. Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT
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