Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT-Reference-Cited by-同舟云学术

Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT

Published:2021-12-27 Issue:26 Volume:119 Page:262104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Lian¹^ORCID,Cheng Zhe¹,He Yawei¹,Xu Jianxing²^ORCID,Jia Lifang¹,Wang Xinyuan¹,Zhang Shiyong²,Tan Wei²,Zhang Yun¹

Affiliation:

1. Institute of Semiconductor, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

2. Terahertz Physics Laboratory, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610299, People's Republic of China

Funder

Science Challenge Project

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0077937

Reference25 articles.

1. Highly ordered ZnO nanostructure arrays: Preparation and light-emitting diode application

2. Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

3. A 22–30-GHz GaN Low-Noise Amplifier With 0.4–1.1-dB Noise Figure

4. InAlN/GaN HEMT on Si With fmax = 270 GHz

5. Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz

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